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Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior

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PRELIMINARY Silicon Carbide SJEP120R063 Normally-OFF Trench Silicon Carbide Power JFET Features: - Compatible with Standard Gate Driver ICs - Pos

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Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior

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PRELIMINARY Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switch

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Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior

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Normally-On Trench Silicon Carbide Power JFET Features: - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No

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Silicon Carbide SDP20S120D Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature In

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Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior

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Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior

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Silicon Carbide SJEP170R550 Normally-OFF Trench Silicon Carbide Power JFET Features: - Compatible with Standard Gate Driver ICs - Positive Tempera

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Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior

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Silicon Carbide SJDP120R085 Normally-On Trench Silicon Carbide Power JFET Features: - Positive Temperature Coefficient for Ease of Paralleling - E

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