SJEP170R550 Datasheet - SemiSouth

SJEP170R550, Normally-OFF Trench Silicon Carbide Power JFET

Silicon Carbide SJEP170R550 Normally-OFF Trench Silicon Carbide Power JFET

Features

* - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - RDS(on)max of 0.550 Ω - Voltage Controlled - Low Gate Charge 4 - Low Intrinsic Capacitance Product Summ

Applications

* - Flyback Auxillary Power Supplies for: - Solar inverters - Motor Drives - High Voltage SMPS - High Voltage UPS TO-247 3 2 1 S(3) Internal Schematic MAXIMUM RATINGS Parameter Symbol Continuous Drain Current Pulsed Drain Current (1) Short Circuit Withstand Time Power Dissipation Gate-Source V

SJEP170R550-SemiSouth.pdf