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SJEP170R550 - Normally-OFF Trench Silicon Carbide Power JFET

SJEP170R550 Description

Silicon Carbide SJEP170R550 Normally-OFF Trench Silicon Carbide Power JFET .

SJEP170R550 Features

* - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - RDS(on)max of 0.550 Ω - Voltage Controlled - Low Gate Charge 4 - Low Intrinsic Capacitance Product Summ

SJEP170R550 Applications

* - Flyback Auxillary Power Supplies for: - Solar inverters - Motor Drives - High Voltage SMPS - High Voltage UPS TO-247 3 2 1 S(3) Internal Schematic MAXIMUM RATINGS Parameter Symbol Continuous Drain Current Pulsed Drain Current (1) Short Circuit Withstand Time Power Dissipation Gate-Source V

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Datasheet Details

Part number
SJEP170R550
Manufacturer
SemiSouth
File Size
214.93 KB
Datasheet
SJEP170R550-SemiSouth.pdf
Description
Normally-OFF Trench Silicon Carbide Power JFET

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