USC120R040B 57A 1200V N-CHANNEL SILICON CARBIDE PLANAR ENHANCEMENT POWER MOSFET

UTC

Description

UNISONIC TECHNOLOGIES CO., LTD USC120R040B 57A, 1200V N-CHANNEL SILICON CARBIDE PLANAR ENHANCEMENT POWER MOSFET * .
SiC The material can achieve high voltage with most carrier devices (MOSFET) with fast device structure characteristics, so it can realize the three c.

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Datasheet Specifications

Part number: USC120R040B
Manufacturer: UTC
File Size: 1.10 MB
Datasheet: USC120R040B-UTC.pdf
Description: 57A 1200V N-CHANNEL SILICON CARBIDE PLANAR ENHANCEMENT POWER MOSFET

Features

* RDS(ON) ≤ 53 mΩ @ VGS=18V, ID=30A
* High Blocking Voltage
* High Frequency Operation
* Low on-resistance
* Fast intrinsic diode with low reverse recovery
* 100% avalanche tested
* SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2025 Unisonic Technologies Co. , Ltd

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USC120R040B 57A 1200V N-CHANNEL SILICON CARBIDE PLANAR ENHANCEMENT POWER MOSFET UTC

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