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SCT20N120AG Automotive-grade silicon carbide Power MOSFET

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Description

SCT20N120AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an HiP247 package .
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

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Features

* HiP247 3 2 1 D(2, TAB)
* AEC-Q101 qualified
* Very tight variation of on-resistance vs. temperature
* Very high operating temperature capability (TJ = 200 °C)
* Very fast and robust intrinsic body diode

Applications

* Motor drives
* EV chargers
* High voltage DC-DC converters

SCT20N120AG Distributors

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