SCT20N120AG Datasheet (STMicroelectronics) - Automotive-grade silicon carbide Power MOSFET

SCT20N120AG, Automotive-grade silicon carbide Power MOSFET

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.

The outstanding thermal properties of the SiC materia

SCT20N120AG Features

* HiP247 3 2 1 D(2, TAB)

* AEC-Q101 qualified

* Very tight variation of on-resistance vs. temperature

* Very high operating temperature capability (TJ = 200 °C)

* Very fast and robust intrinsic body diode

* Low capacitance Applications

* Motor drives