Part number:
F2N60
Manufacturer:
ROUM
File Size:
1.42 MB
Description:
2a 600v n-channel enhancement mode power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤4.5Ω)
* Low Gate Charge(Typ:8nC)
* Low Reverse Transfer Capacitances(Typ:3.8pF)
* 100% Single Pulse Avalanche Energy Test
* 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications
* used in various power switching circuit for sys
F2N60
ROUM
1.42 MB
2a 600v n-channel enhancement mode power mosfet.
📁 Related Datasheet
F2N60 - PJF2N60
(Pan Jit International)
PJP2N60 / PJF2N60
600V N-Channel Enhancement Mode MOSFET FEATURES
• 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A
TO-220AB / ITO-220AB TO-220AB
• Low ON R.
F2N60 - 600V N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
F2N60
2.0A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC F2N60 is a N-Channel enhancement mode silicon gate power .
F2N60 - N-CHANNEL POWER MOSFET
(Red Diamond Optoelectronics)
F2N60
N- MOS /N-CHANNEL POWER MOSFET
◆:
◇Applications:Electronic Ballast Electronic Transformer Switch Mode Power Supply
◆: RoHS
◇Features:.
F2001 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2002 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2003 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2004 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2012 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
