F2N60 Datasheet - ROUM

F2N60, 2A 600V N-channel Enhancement Mode Power MOSFET

2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 600V N-channel Enhancement Mode Power MOSFET 1 .
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance.

Features

* Fast Switching
* Low ON Resistance(Rdson≤4.5Ω)
* Low Gate Charge(Typ:8nC)
* Low Reverse Transfer Capacitances(Typ:3.8pF)
* 100% Single Pulse Avalanche Energy Test

Applications

* used in various power switching circuit for system miniaturization and higher efficiency.
* Power switch circuit of electron ballast and adaptor. 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Drian-Source Voltage Gate-Drain Volt

F2N60-ROUM.pdf

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Datasheet Details

Part number:

F2N60

Manufacturer:

ROUM

File Size:

1.42 MB

Description:

2A 600V N-channel Enhancement Mode Power MOSFET

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F2N60 600V N-channel Enhancement Mode Power MOSFET ROUM

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