Datasheet Details
- Part number
- I2N60
- Manufacturer
- ROUM
- File Size
- 1.42 MB
- Datasheet
- I2N60-ROUM.pdf
- Description
- 2A 600V N-channel Enhancement Mode Power MOSFET
I2N60 Description
2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 600V N-channel Enhancement Mode Power MOSFET 1 .
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance.
I2N60 Features
* Fast Switching
* Low ON Resistance(Rdson≤4.5Ω)
* Low Gate Charge(Typ:8nC)
* Low Reverse Transfer Capacitances(Typ:3.8pF)
* 100% Single Pulse Avalanche Energy Test
I2N60 Applications
* used in various power switching circuit for system miniaturization and higher efficiency.
* Power switch circuit of electron ballast and adaptor. 4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
Parameter
Symbol
Drian-Source Voltage Gate-Drain Volt
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