RM3075S8 Datasheet (Rectron) - N and P-Channel Enhancement Mode Power MOSFET

RM3075S8, N and P-Channel Enhancement Mode Power MOSFET

The RM3075S8 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for high and low side switches for inverter ; high and low side switches for generic Half-Bri

RM3075S8 Features

* N-Channel VDS = 30V,ID =6.8A RDS(ON) < 40m @ VGS=4.5V RDS(ON) < 27m @ VGS=10V P-Channel VDS = -30V,ID = -4.6A RDS(ON) < 103m @ VGS=-4.5V RDS(ON) < 64m @ VGS=-10V N-channel P-channel Schematic diagram 3075 High power and current handing capability Lead free product is acquired Surface mount pack