Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode
Outline
RENESAS Package code: PRSS0004AC-A (Package n
2SK210, Toshiba Semiconductor
2SK210
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK210
FM Tuner Applications VHF Band Amplifier Applications
• • • High power .
2SK2101-01MR, Fuji Electric
2SK2101-01MR
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.
2SK2109, NEC
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2109
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2109 is a N-channel MOS FET of a vertical type and.
2SK211, Toshiba Semiconductor
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK211
2SK211
FM Tuner Applications VHF Band Amplifier Applications
Unit: mm
• Low.
Stock and price
Renesas Electronics Corporation
POWER FIELD-EFFECT TRANSISTOR, 15A I(D), 150V, 0.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET (Also Known As: 2SK2131-AZ)