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2SK2130 - Silicon N-Channel Power F-MOS FET

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Panasonic Semiconductor

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2SK2130 Silicon N-Channel Power F-MOS FET by Panasonic Semiconductor - Datasheet Preview — Datasheet preview – 2SK2130

Datasheet Details

Part number	2SK2130
Manufacturer	Panasonic Semiconductor
File Size	44.03 KB
Description	Silicon N-Channel Power F-MOS FET
Datasheet	2SK2130 Datasheet
Additional preview pages of the 2SK2130 datasheet.

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Features

q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 45ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s.

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Other Datasheets by Panasonic Semiconductor

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2SK2129 - Silicon N-Channel Power F-MOS FET

Published: Mar 30, 2005 |