2SK2126 Datasheet, Fet, Panasonic Semiconductor

2SK2126 Features

• Fet q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 40ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Appl

PDF File Details

Part number:

2SK2126

Manufacturer:

Panasonic Semiconductor

File Size:

46.18kb

Download:

📄 Datasheet

Description:

Silicon n-channel power f-mos fet.

2SK2126 Application

• Applications 4.1±0.2 8.0±0.2 Solder Dip 13.7
    –0.2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor

TAGS

2SK2126

Panasonic Semiconductor

📁 Related Datasheet

2SK212 - N-Channel MOSFET (Sanyo Semicon Device)
Ordering number:EN661E N-Channel Junction Silicon FET 2SK212 FM Tuner Applications Features · Ideal for FM tuners in low-voltage radios, car radios,.

2SK212 - N-channel MOSFET (Xiao sheng Elctronic)
Silicon N Channel Junction FETs LH03 series of products interconvertible 2SK212 Xiaosheng D Symbol Applications For charge sensor, meter amplifier c.

2SK2123 - Silicon N-Channel Power F-MOS FET (Panasonic Semiconductor)
Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q .

2SK2124 - Silicon N-Channel Power F-MOS FET (Panasonic Semiconductor)
Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = ±30V guaranteed q .

2SK2125 - Silicon N-Channel Power F-MOS FET (Panasonic Semiconductor)
Power F-MOS FETs 2SK2125 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15.6mJ q VGSS = ±30V guaranteed q.

2SK2128 - Silicon N-Channel Power F-MOS FET (Panasonic Semiconductor)
Power F-MOS FETs 2SK2128 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±20V guaranteed q H.

2SK2129 - Silicon N-Channel Power F-MOS FET (Panasonic Semiconductor)
Power F-MOS FETs 2SK2129 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q H.

2SK210 - N-Channel MOSFET (Toshiba Semiconductor)
2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications • • • High power .

2SK2100-01MR - Power MOSFET (Fuji Electric)
.

2SK2101-01MR - N-channel MOS-FET (Fuji Electric)
2SK2101-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.