Datasheet4U Logo Datasheet4U.com

2SK2129

Silicon N-Channel Power F-MOS FET

2SK2129 Features

* q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 50ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Applications 4.1±0.2 8.0±0.2 Solder Dip 13.7

* 0.2 q Contactless relay q Diving circuit for a solenoid q Driving

2SK2129 Datasheet (43.95 KB)

Preview of 2SK2129 PDF

Datasheet Details

Part number:

2SK2129

Manufacturer:

Panasonic Semiconductor

File Size:

43.95 KB

Description:

Silicon n-channel power f-mos fet.

📁 Related Datasheet

2SK212 - N-Channel MOSFET (Sanyo Semicon Device)
Ordering number:EN661E N-Channel Junction Silicon FET 2SK212 FM Tuner Applications Features · Ideal for FM tuners in low-voltage radios, car radios,.

2SK212 - N-channel MOSFET (Xiao sheng Elctronic)
Silicon N Channel Junction FETs LH03 series of products interconvertible 2SK212 Xiaosheng D Symbol Applications For charge sensor, meter amplifier c.

2SK2123 - Silicon N-Channel Power F-MOS FET (Panasonic Semiconductor)
Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q .

2SK2124 - Silicon N-Channel Power F-MOS FET (Panasonic Semiconductor)
Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = ±30V guaranteed q .

2SK2125 - Silicon N-Channel Power F-MOS FET (Panasonic Semiconductor)
Power F-MOS FETs 2SK2125 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15.6mJ q VGSS = ±30V guaranteed q.

2SK2126 - Silicon N-Channel Power F-MOS FET (Panasonic Semiconductor)
Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q .

2SK2128 - Silicon N-Channel Power F-MOS FET (Panasonic Semiconductor)
Power F-MOS FETs 2SK2128 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±20V guaranteed q H.

2SK210 - N-Channel MOSFET (Toshiba Semiconductor)
2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications • • • High power .

TAGS

2SK2129 Silicon N-Channel Power F-MOS FET Panasonic Semiconductor

Image Gallery

2SK2129 Datasheet Preview Page 2 2SK2129 Datasheet Preview Page 3

2SK2129 Distributor