2SK2129 - Silicon N-Channel Power F-MOS FET
2SK2129 Features
* q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 50ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Applications 4.1±0.2 8.0±0.2 Solder Dip 13.7
* 0.2 q Contactless relay q Diving circuit for a solenoid q Driving
