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HAT2200WP - Silicon N-Channel Power MOSFET

HAT2200WP Description

HAT2200WP Silicon N Channel Power MOS FET Power Switching .

HAT2200WP Features

* Capable of 8 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 22 m typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 4 321 G Preliminary Datasheet REJ03G1678-0311 Rev.3.11 Nov.25.2016 5 678 D DD

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Silicon N-Channel Power MOSFET Renesas Technology
Renesas Technology HAT2200WP-like datasheet