Datasheet4U Logo Datasheet4U.com

HAT2201WP - Silicon N-Channel Power MOSFET

HAT2201WP Description

HAT2201WP Silicon N Channel Power MOS FET Power Switching .

HAT2201WP Features

* Capable of 8 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 34 m typ. (at VGS = 10 V) Outline Preliminary Datasheet REJ03G1679-0310 Rev.3.10 May 21, 2010 RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 5 678 D DDD 4 4 32 1

📥 Download Datasheet

Preview of HAT2201WP PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • HAT2201RJ - N-Channel 100V MOSFET (VBsemi)
  • HAT200-S - (HAT200-S - HAT1500-S) Current Transducer (LEM)
  • HAT2016R - Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT2019R - Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT2020R - Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT2022R - Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT2024R - Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT2024RJ - Dual N-Channel MOSFET (VBsemi)

📌 All Tags

Silicon N-Channel Power MOSFET Renesas Technology
Renesas Technology HAT2201WP-like datasheet