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RJK0366DPA - Silicon N Channel Power MOS FET Power Switching

RJK0366DPA Description

www.DataSheet4U.com RJK0366DPA Silicon N Channel Power MOS FET Power Switching REJ03G1656-0600 Rev.6.00 Aug 05, 2008 .

RJK0366DPA Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.5 mΩ typ. (at VGS = 10 V)
* Pb-free
* Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7

RJK0366DPA Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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