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RJK03N2DPA Built in SBD N Channel Power MOS FET

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Description

RJK03N2DPA 30V, 40A, 4.0mΩmax.Built in SBD N Channel Power MOS FET High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Features

* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance
* Pb-free
* Halogen-free Outline Preliminary Datasheet R07DS0783EJ0200 Rev.2.00 Feb 12, 2013 RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F))

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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