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RQM2201DNS Silicon N Channel MOS FET Power Switching

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Description

www.DataSheet4U.com RQM2201DNS Silicon N Channel MOS FET Power Switching REJ03G1492-0200 Rev.2.00 Apr 16, 2007 .

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Features

* Small, thin and leadless type package (3 × 3 mm, t = 0.8 mm max. ) Two FET chips are mounted in one package High density mounting High speed switching. (Ciss = 200 pF typ) VDSS ≥ 60 V and capable of 2.5 V gate drive Outline RENESAS Package code: PWSN

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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