2SC3518
686.97kb
Silicon power transistors. The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES
TAGS
📁 Related Datasheet
2SC3510 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SC3127, 2SC3128, 2SC3510
Silicon NPN Epitaxial
Application
UHF/VHF wide band amplifier
Outline
MPAK 2SC3127
3 1 2
1. Emitter 2. Base 3. Collector.
2SC3512 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SC3512
Silicon NPN Epitaxial
Application
UHF / VHF wide band amplifier
Outline
TO-92 (2)
1. Base 2. Emitter 3. Collector 3 2 1
2SC3512
Absolute M.
2SC3512 - Silicon NPN Transistor
(Renesas)
2SC3512
Silicon NPN Epitaxial
REJ03G0714-0300 Rev.3.00 Apr 20, 2006
Application
UHF / VHF wide band amplifier
Outline
RENESAS Package code: PRSS0003.
2SC3512 - Silicon NPN RF Transistor
(Inchange Semiconductor)
isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC3512
DESCRIPTION ·Low Noise and High Gain
NF = 1.6 dB TYP. @f = 900 MHz PG = 10.5 dB TYP. @f.
2SC3513 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SC3513
Silicon NPN Epitaxial
Application
UHF / VHF wide band amplifier
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC3513
Absolute Maxim.
2SC3513 - Silicon NPN Epitaxial Transistor
(Kexin)
SMD Type
Silicon NPN Epitaxial 2SC3513
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55.
2SC3514 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
2SC3514
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Comple.
2SC3515 - Silicon NPN Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC3515
2SC3515
HIGH Voltage Control Applications Plasma Display, Nixie Tube Drive.
2SC3515 - Transistor
(Kexin)
SMD Type
High Voltage Control Applications 2SC3515
Transistors
Features
High Voltage: VCBO = 300V , VCEO = 300V Low Saturation Voltage: VCE(sat) = 0.
2SC3518 - NPN Power Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Low collector saturation voltage ·High DC current gain ·Minimum Lot-to-Lot variations for robust device.