2SC3518 Datasheet, Transistors, Renesas

2SC3518 Features

  • Transistors
  • High DC Current Gain hFE = 100 to 400
  • Low VCE(sat): VCE(sat) = 0.09 V TYP.
  • Complement to 2SA1385-Z ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base

PDF File Details

Part number:

2SC3518

Manufacturer:

Renesas ↗

File Size:

686.97kb

Download:

📄 Datasheet

Description:

Silicon power transistors. The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES

  • Datasheet Preview: 2SC3518 📥 Download PDF (686.97kb)
    Page 2 of 2SC3518 Page 3 of 2SC3518

    2SC3518 Application

    • Applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Elect

    TAGS

    2SC3518
    Silicon
    Power
    Transistors
    Renesas

    📁 Related Datasheet

    2SC3510 - Silicon NPN Transistor (Hitachi Semiconductor)
    2SC3127, 2SC3128, 2SC3510 Silicon NPN Epitaxial Application UHF/VHF wide band amplifier Outline MPAK 2SC3127 3 1 2 1. Emitter 2. Base 3. Collector.

    2SC3512 - Silicon NPN Transistor (Hitachi Semiconductor)
    2SC3512 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC3512 Absolute M.

    2SC3512 - Silicon NPN Transistor (Renesas)
    2SC3512 Silicon NPN Epitaxial REJ03G0714-0300 Rev.3.00 Apr 20, 2006 Application UHF / VHF wide band amplifier Outline RENESAS Package code: PRSS0003.

    2SC3512 - Silicon NPN RF Transistor (Inchange Semiconductor)
    isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3512 DESCRIPTION ·Low Noise and High Gain NF = 1.6 dB TYP. @f = 900 MHz PG = 10.5 dB TYP. @f.

    2SC3513 - Silicon NPN Transistor (Hitachi Semiconductor)
    2SC3513 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC3513 Absolute Maxim.

    2SC3513 - Silicon NPN Epitaxial Transistor (Kexin)
    SMD Type Silicon NPN Epitaxial 2SC3513 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55.

    2SC3514 - Silicon NPN Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Power Transistor 2SC3514 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Comple.

    2SC3515 - Silicon NPN Transistor (Toshiba Semiconductor)
    TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 2SC3515 HIGH Voltage Control Applications Plasma Display, Nixie Tube Drive.

    2SC3515 - Transistor (Kexin)
    SMD Type High Voltage Control Applications 2SC3515 Transistors Features High Voltage: VCBO = 300V , VCEO = 300V Low Saturation Voltage: VCE(sat) = 0.

    2SC3518 - NPN Power Transistor (INCHANGE)
    isc Silicon NPN Power Transistor DESCRIPTION ·Low collector saturation voltage ·High DC current gain ·Minimum Lot-to-Lot variations for robust device.

    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts