2SC3518-Z SILICON POWER TRANSISTOR

Renesas

Description

DATA SHEET SILICON POWER TRANSISTOR 2SC3518-Z NPN SILICON EPITAXIAL TRANSISTOR .
The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. High DC Current G.

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Datasheet Specifications

Part number: 2SC3518-Z
Manufacturer: Renesas ↗
File Size: 686.97 KB
Datasheet: 2SC3518-Z_Renesas.pdf
Description: SILICON POWER TRANSISTOR

Features

* High DC Current Gain hFE = 100 to 400
* Low VCE(sat): VCE(sat) = 0.09 V TYP.
* Complement to 2SA1385-Z ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 7 V Collector Cu

Applications

* of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

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2SC3518-Z SILICON POWER TRANSISTOR Renesas

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