2SC3518-Z
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Silicon power transistor. The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES
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2SC3518-Z - NPN Transistor
(NEC)
.
2SC3518-Z - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Low collector saturation voltage ·High DC current gain ·100% avalanche tested ·Minimum Lot-to-Lot varia.
2SC3518-Z - NPN Transistor
(Kexin)
SMD Type
NPN Silicon Epitaxia 2SC3518-Z
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low VCE(sat).
+0.2 9.70 .
2SC3518 - NPN Power Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Low collector saturation voltage ·High DC current gain ·Minimum Lot-to-Lot variations for robust device.
2SC3518 - Silicon Power Transistors
(Renesas)
DATA SHEET
SILICON POWER TRANSISTOR
2SC3518-Z
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3518-Z is designed for Audio Frequency Amplifier a.
2SC3510 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SC3127, 2SC3128, 2SC3510
Silicon NPN Epitaxial
Application
UHF/VHF wide band amplifier
Outline
MPAK 2SC3127
3 1 2
1. Emitter 2. Base 3. Collector.
2SC3512 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SC3512
Silicon NPN Epitaxial
Application
UHF / VHF wide band amplifier
Outline
TO-92 (2)
1. Base 2. Emitter 3. Collector 3 2 1
2SC3512
Absolute M.
2SC3512 - Silicon NPN Transistor
(Renesas)
2SC3512
Silicon NPN Epitaxial
REJ03G0714-0300 Rev.3.00 Apr 20, 2006
Application
UHF / VHF wide band amplifier
Outline
RENESAS Package code: PRSS0003.
2SC3512 - Silicon NPN RF Transistor
(Inchange Semiconductor)
isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC3512
DESCRIPTION ·Low Noise and High Gain
NF = 1.6 dB TYP. @f = 900 MHz PG = 10.5 dB TYP. @f.
2SC3513 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SC3513
Silicon NPN Epitaxial
Application
UHF / VHF wide band amplifier
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC3513
Absolute Maxim.