2SD2655 Datasheet - Renesas

2SD2655, Silicon NPN epitaxial planer type Transistor

2SD2655 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier Preliminary Datasheet R07DS0281EJ0400 Rev.4.00 Jan 10, 2014 .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Details

Part number:

2SD2655

Manufacturer:

Renesas ↗

File Size:

103.09 KB

Description:

Silicon NPN epitaxial planer type Transistor

Features

* Small size package: MPAK (SC
* 59A)
* Large Maximum current: IC = 1 A
* Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max. (at IC/IB = 0.5 A/0.05 A)
* High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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2SD2655 Silicon NPN epitaxial planer type Transistor Renesas

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