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2SD2655

Silicon NPN epitaxial planer type Transistor

2SD2655 Features

* Small size package: MPAK (SC

* 59A)

* Large Maximum current: IC = 1 A

* Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A)

* High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))

2SD2655 General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

2SD2655 Datasheet (103.09 KB)

Preview of 2SD2655 PDF

Datasheet Details

Part number:

2SD2655

Manufacturer:

Renesas ↗

File Size:

103.09 KB

Description:

Silicon npn epitaxial planer type transistor.

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2SD2655 Silicon NPN epitaxial planer type Transistor Renesas

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