2SD2650 - NPN Triple Diffused Planar Silicon Transistor
2SD2650 Features
* Package Dimensions unit : mm 2174A [2SD2650] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 3.5 0.8 2.1 1 : Ba
