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2SD2627 - NPN Triple Diffused Planar Silicon Transistor

Datasheet Summary

Features

  • Package Dimensions unit : mm 2079C [2SD2627] 10.0 3.5 7.2 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 4.5 2.8 3.2 16.1 16.0 0.9 1.2 14.0 3.6 0.75 0.7 0.6 1 2 3 2.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current.

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Datasheet Details

Part number 2SD2627
Manufacturer Sanyo Semicon Device
File Size 28.06 KB
Description NPN Triple Diffused Planar Silicon Transistor
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Full PDF Text Transcription

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Ordering number : ENN6478 2SD2627 NPN Triple Diffused Planar Silicon Transistor 2SD2627 Color TV Horizontal Deflection Output Applications Features • • • • • Package Dimensions unit : mm 2079C [2SD2627] 10.0 3.5 7.2 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 4.5 2.8 3.2 16.1 16.0 0.9 1.2 14.0 3.6 0.75 0.7 0.6 1 2 3 2.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C 2.
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