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2SD2620J - Silicon NPN Transistor

Datasheet Summary

Features

  • High forward current transfer ratio hFE.
  • Low collector to emitter saturation voltage VCE(sat).
  • High emitter to base voltage VBEO.
  • SS-mini type package 0.12+0.03.
  • 0.01 3 1.60±0.05 0.85+0.05.
  • 0.03 (0.375) 1 0.27±0.02 2 (0.80) (0.50)(0.50) 0 to 0.02 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipatio.

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Datasheet Details

Part number 2SD2620J
Manufacturer Panasonic Semiconductor
File Size 43.56 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD2620J Datasheet
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Full PDF Text Transcription

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Transistors 2SD2620J Silicon NPN epitaxial planer type Unit: mm 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 For low-frequency amplification I Features • High forward current transfer ratio hFE • Low collector to emitter saturation voltage VCE(sat) • High emitter to base voltage VBEO • SS-mini type package 0.12+0.03 –0.01 3 1.60±0.05 0.85+0.05 –0.03 (0.375) 1 0.27±0.02 2 (0.80) (0.50)(0.50) 0 to 0.02 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 100 100 15 50 20 125 125 −55 to +125 Unit V V V mA mA mW °C °C 5° 0.70+0.05 –0.
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