* High forward current transfer ratio hFE
* Low collector-emitter saturation voltage VCE(sat)
* High emitter-base voltage (Collector open) VEBO 3 0.15 min. 0.80±0.05 1.20±0.05 (0.40) (0.40)
* Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter
2SD2621
Panasonic Semiconductor
104.33 KB
Silicon npn epitaxial planar type transistor.
Transistors
2SD2621
Silicon NPN epitaxial planar type
For low-frequency driver amplification
0.33+0.05
*0.02
Unit: mm
0.10+0.05
*0.0.
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