2SD2604 Datasheet - Toshiba Semiconductor

2SD2604 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2604 2SD2604 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm High DC current gain: hFE = 2000 (min) Low saturation voltage: VCE (sat) = 1.5 V (max) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 95 V Collector-emitter voltage VCEO 110 ± 15 V Emitter-base voltage VEBO 5 V Collector current DC Pulse .

2SD2604 Datasheet (135.62 KB)