C5508 Datasheet - Renesas

C5508 NPN SILICON RF TRANSISTOR

C5508 Features

* Ideal for low-noise, high-gain amplification applications

* NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

* Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz

* fT = 25 GHz technology adopted

* Flat-lead 4

Datasheet Details

C5508

246.24 KB

Npn silicon rf transistor.

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C5508 C5508 NPN SILICON TRANSISTOR Renesas

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