* Ideal for low-noise, high-gain amplification applications
* NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
* Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz
* fT = 25 GHz technology adopted
* Flat-lead 4
C5508
246.24 KB
Npn silicon rf transistor.
Preliminary Data Sheet 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) R09D.
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