* Ideal for medium output power amplification
* PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm
* HFT3 technology (fT = 12 GHz) adopted
* High reliability through use of gold electrodes
* Flat-lead 4-pin thin-type super minimold package ORDE
C5751
131.78 KB
Npn silicon rf transistor.
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5751
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW)
FLAT-LEAD 4-PIN THIN-TYPE SUPER M.
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