Datasheet4U Logo Datasheet4U.com

C5751 Datasheet - Renesas

C5751 NPN SILICON RF TRANSISTOR

C5751 Features

* Ideal for medium output power amplification

* PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm

* HFT3 technology (fT = 12 GHz) adopted

* High reliability through use of gold electrodes

* Flat-lead 4-pin thin-type super minimold package ORDE

C5751 Datasheet (131.78 KB)

Preview of C5751 PDF
C5751 Datasheet Preview Page 2 C5751 Datasheet Preview Page 3

Datasheet Details

Part number:

C5751

Manufacturer:

Renesas ↗

File Size:

131.78 KB

Description:

Npn silicon rf transistor.

📁 Related Datasheet

C5750 NPN SILICON RF TRANSISTOR (Renesas)

C5750X5R0J107M Multilayer Ceramic Chip Capacitors (TDK)

C5750X5R1A107M Multilayer Ceramic Chip Capacitors (TDK)

C5750X5R1A686M Multilayer Ceramic Chip Capacitors (TDK)

C5750X5R1C336M Multilayer Ceramic Chip Capacitors (TDK)

C5750X5R1C476M Multilayer Ceramic Chip Capacitors (TDK)

C5750X5R1E226M Multilayer Ceramic Chip Capacitors (TDK)

C5750X5R1H106K Multilayer Ceramic Chip Capacitors (TDK)

TAGS

C5751 NPN SILICON TRANSISTOR Renesas

C5751 Distributor