C5750 Datasheet - Renesas

C5750 NPN SILICON RF TRANSISTOR

C5750 Features

* Ideal for medium output power amplification

* PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm

* HFT3 technology (fT = 12 GHz) adopted

* High reliability through use of gold electrodes

* 4-pin super minimold package ORDERING INFORMATION Pa

Datasheet Details

C5750

131.09 KB

Npn silicon rf transistor.

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C5750 C5750 NPN SILICON TRANSISTOR Renesas

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