C5750 NPN SILICON RF TRANSISTOR

Renesas

C5750 Description

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) 4-PIN SUPER MINIMOLD .

C5750 Features

* Ideal for medium output power amplification
* PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm
* HFT3 technology (fT = 12 GHz) adopted
* High reliability through use of gold electrodes
* 4-pin super minimold package ORDERING INFORMATION Pa

📥 Download Datasheet

C5750 Datasheet Preview — Preview of C5750 PDF

Datasheet Details

Part number: C5750
Manufacturer: Renesas ↗
File Size: 131.09 KB
Datasheet: C5750-Renesas.pdf
Description: NPN SILICON RF TRANSISTOR

📁 Related Datasheet

C5750X5R0J107M - Multilayer Ceramic Chip Capacitors (TDK)
C5750X5R1A107M - Multilayer Ceramic Chip Capacitors (TDK)
C5750X5R1A686M - Multilayer Ceramic Chip Capacitors (TDK)
C5750X5R1C336M - Multilayer Ceramic Chip Capacitors (TDK)
C5750X5R1C476M - Multilayer Ceramic Chip Capacitors (TDK)
C5750X5R1E226M - Multilayer Ceramic Chip Capacitors (TDK)
C5750X5R1H106K - Multilayer Ceramic Chip Capacitors (TDK)
C5750X5R1H106M - Multilayer Ceramic Chip Capacitors (TDK)

📌 All Tags

NPN SILICON TRANSISTOR Renesas

Renesas C5750-like datasheet

C5751 - NPN SILICON RF TRANSISTOR
C5753 - NPN SILICON RF TRANSISTOR
C5702 - 2SC5702