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C5753

NPN SILICON RF TRANSISTOR

C5753 Features

* Ideal for medium output power amplification

* PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm

* HFT3 technology (fT = 12 GHz) adopted

* High reliability through use of gold electrodes

* Flat-lead 4-pin thin-type super minimold package ORDE

C5753 Datasheet (138.33 KB)

Preview of C5753 PDF

Datasheet Details

Part number:

C5753

Manufacturer:

Renesas ↗

File Size:

138.33 KB

Description:

Npn silicon rf transistor.
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER M.

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C5753 NPN SILICON TRANSISTOR Renesas

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