* 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and Access Time DINOR (Divided bit-line NOR) architecture for the memory cell. 4M-bit SRAM is a 524,288 bytes / 262,144 words asynchronous SRAM fabricated by silicon-gate CMOS technology. M6M
M6MGT331S4BKT Datasheet (158.58 KB)
M6MGT331S4BKT
158.58 KB
Cmos sram.
www.DataSheet4U.com
Preliminary
Notice: This is not a final specification. Some parametric limits are subject to change.
Renesas LSIs
M6MGB/T331S4B.
📁 Related Datasheet
M6MGT331S8AKT CMOS SRAM (Renesas)
M6MGT331S8BKT CMOS SRAM (Renesas)
M6MGT33BS8AWG-P CMOS SRAM (Renesas)
M6MGT33BS8BWG CMOS SRAM (Renesas)
M6MGT33BS8BWG-P CMOS SRAM (Renesas)
M6MGT321S4TP CMOS SRAM (Renesas)
M6MGT321S8TP CMOS SRAM (Renesas)
M6MGT32BS4WG CMOS SRAM (Renesas)
M6MGT32BS8WG CMOS SRAM (Renesas)
M6MGT160S2BVP CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP (Mitsubishi)
