M6MGT331S4BKT CMOS SRAM

Renesas

Description

www.DataSheet4U.com Preliminary Notice: This is not a final specification.Some parametric limits are subject to change.Renesas LSIs M6MGB/T331S4B.
The M6MGB/T331S4BKT is a Stacked micro Multi Chip Package (S- µMCP) that contents 32M-bit Flash memory and 4M-bit Static RAM in a 52-pin TSOP for lead.

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Datasheet Specifications

Part number: M6MGT331S4BKT
Manufacturer: Renesas ↗
File Size: 158.58 KB
Datasheet: M6MGT331S4BKT_Renesas.pdf
Description: CMOS SRAM

Features

* 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and Access Time DINOR (Divided bit-line NOR) architecture for the memory cell. 4M-bit SRAM is a 524,288 bytes / 262,144 words asynchronous SRAM fabricated by silicon-gate CMOS technology. M6M

M6MGT331S4BKT Distributors

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M6MGT331S4BKT CMOS SRAM Renesas

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