M6MGT166S2BWG Datasheet, Stacked-csp, Mitsubishi

M6MGT166S2BWG Features

  • Stacked-csp
  • Access time Flash Memory 90ns (Max.) SRAM 85ns (Max.)
  • Supply voltage Vcc=2.7 ~ 3.6V
  • Ambient temperature I version Ta=-40 ~ 85°C
  • Package : 72-pin

PDF File Details

Part number:

M6MGT166S2BWG

Manufacturer:

Mitsubishi

File Size:

253.20kb

Download:

📄 Datasheet

Description:

Cmos 3.3v-only flash memory & cmos sram stacked-csp. The MITSUBISHI M6MGB/T166S2BWG is a Stacked Chip Scale Package (S-CSP) that contents 16M-bits flash memory and 2M-bits Static RAM in

Datasheet Preview: M6MGT166S2BWG 📥 Download PDF (253.20kb)
Page 2 of M6MGT166S2BWG Page 3 of M6MGT166S2BWG

TAGS

M6MGT166S2BWG
CMOS
3.3V-ONLY
FLASH
MEMORY
CMOS
SRAM
Stacked-CSP
Mitsubishi

📁 Related Datasheet

M6MGT166S4BWG - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP (Mitsubishi)
MITSUBISHI LSIs M6MGB/T166S4BWG 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS.

M6MGT160S2BVP - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP (Mitsubishi)
M6MGB/T160S2BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-B.

M6MGT160S4BVP - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP (Mitsubishi)
MITSUBISHI LSIs M6MGB/T160S4BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262.

M6MGT162S2BVP - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP (Mitsubishi)
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (262,144-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Pack.

M6MGT162S4BVP - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP (Mitsubishi)
M6MGB/T162S4BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP .

M6MGT321S4TP - CMOS SRAM (Renesas)
.. Renesas LSIs M6MGB/T321S4TP 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,.

M6MGT321S8TP - CMOS SRAM (Renesas)
.. Renesas LSIs M6MGB/T321S8TP 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.0V-ONLY FLASH MEMORY & 8,.

M6MGT32BS4WG - CMOS SRAM (Renesas)
.. Renesas LSIs M6MGB/T32BS4WG 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS FLASH MEMORY 4,194,304-BIT (262,144-WORD BY 16-BIT) C.

M6MGT32BS8WG - CMOS SRAM (Renesas)
.. Renesas LSIs M6MGB/T32BS8WG 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS FLASH MEMORY 8,388,608-BIT (524,288-WORD BY 16-BIT) C.

M6MGT331S4BKT - CMOS SRAM (Renesas)
.. Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. Renesas LSIs M6MGB/T331S4B.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts