Datasheet Specifications
- Part number
- M6MGT321S8TP
- Manufacturer
- Renesas ↗
- File Size
- 92.87 KB
- Datasheet
- M6MGT321S8TP_Renesas.pdf
- Description
- CMOS SRAM
Description
www.DataSheet4U.com Renesas LSIs M6MGB/T321S8TP 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.0V-ONLY FLASH MEMORY & 8,.
Features
* DINOR (Divided bit-line NOR) architecture for the memory cell. Access Time Flash 85ns (Max. ) 8M-bit SRAM is a 1,048,576 bytes / 524,288 words SRAM 85ns (Max. ) asynchronous SRAM fabricated by silicon-gate CMOS technology. Supply Voltage VCC=2.7 ~ 3.0V The M6MGB/T321S8TP is a Stacked micro Multi ChipM6MGT321S8TP Distributors
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