N0600N

MOS FIELD EFFECT TRANSISTOR

Renesas

Image	Manufacturer	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	Rochester Electronics LLC	N0600N-S17-AY	MOSFET N-CH 60V 30A TO220	DigiKey	0	476 units	$0.63	🛒 Buy Now

N0600N Datasheet (252.64 KB)

N0600N Datasheet Preview — Preview of N0600N PDF

Datasheet Details

Part number:

N0600N

Manufacturer:

Renesas ↗

File Size:

252.64 KB

Description:

Mos field effect transistor.

N0600N Features

* Low on-state resistance ⎯ RDS(on)1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A) ⎯ RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 15 A)

* Low input capacitance ⎯ Ciss = 1380 pF TYP. (VDS = 10 V, VGS = 0 V) Ordering Information Part No. N0600N-S17-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50p/

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N0600N MOS FIELD EFFECT TRANSISTOR Renesas

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