N0600N Datasheet - Renesas

N0600N MOS FIELD EFFECT TRANSISTOR

N0600N Features

* Low on-state resistance ⎯ RDS(on)1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A) ⎯ RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 15 A)

* Low input capacitance ⎯ Ciss = 1380 pF TYP. (VDS = 10 V, VGS = 0 V) Ordering Information Part No. N0600N-S17-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50p/

N0600N_Renesas.pdf

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Datasheet Details

Part number:

N0600N

Manufacturer:

Renesas ↗

File Size:

252.64 KB

Description:

Mos field effect transistor.

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N0600N N0600N MOS FIELD EFFECT TRANSISTOR Renesas

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