N0600N MOS FIELD EFFECT TRANSISTOR

Renesas

Description

Preliminary Data Sheet N0600N MOS FIELD EFFECT TRANSISTOR .
R07DS0220EJ0100 Rev.

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Datasheet Specifications

Part number: N0600N
Manufacturer: Renesas ↗
File Size: 252.64 KB
Datasheet: N0600N_Renesas.pdf
Description: MOS FIELD EFFECT TRANSISTOR

Features

* Low on-state resistance ⎯ RDS(on)1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A) ⎯ RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
* Low input capacitance ⎯ Ciss = 1380 pF TYP. (VDS = 10 V, VGS = 0 V) Ordering Information Part No. N0600N-S17-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50p/

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N0600N MOS FIELD EFFECT TRANSISTOR Renesas

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