N0600N Datasheet, Transistor, Renesas

N0600N Features

• Transistor
• Low on-state resistance ⎯ RDS(on)1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A) ⎯ RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
• Low input capacitance ⎯ Ciss = 1380 pF TYP. (

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N0600N

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Renesas ↗

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📄 Datasheet

Description:

Mos field effect transistor. R07DS0220EJ0100 Rev.1.00 Jan 25, 2011 The N0600N is N-channel MOS Field Effect Transistor designed for high current switching appli

N0600N Application

• Applications Features
• Low on-state resistance ⎯ RDS(on)1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A) ⎯ RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID =

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N0600N

Renesas

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