NP22N055IHE Features
* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A)
* Low Ciss : Ciss = 590 pF TYP.
* Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP22N055HHE NP22N055IHE Note TO-251 (JEI
Datasheet Details
NP22N055IHE, NP22N055HHE
203.34 KB
N-channel power mosfet.
This datasheet PDF includes multiple part numbers: NP22N055IHE, NP22N055HHE.
Please refer to the document for exact specifications by model.
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