NP20N10YDF N-Channel MOSFET

Renesas

Description

Preliminary Data Sheet NP20N10YDF MOS FIELD EFFECT TRANSISTOR R07DS0705EJ0100 Rev.1.00 Apr 17, 2012 .
The NP20N10YDF is N-channel MOS Field Effect Transistor designed for high current switching applications. Low on-state resistance RDS(o.

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Datasheet Specifications

Part number: NP20N10YDF
Manufacturer: Renesas ↗
File Size: 119.14 KB
Datasheet: NP20N10YDF-Renesas.pdf
Description: N-Channel MOSFET

Features

* Low on-state resistance RDS(on) = 55 m MAX. (VGS = 10 V, ID = 10 A) RDS(on) = 68 m MAX. (VGS = 5 V, ID = 10 A) RDS(on) = 74 m MAX. (VGS = 4.5 V, ID = 10 A)
* Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V, VGS = 0 V)
* Logic level drive type

NP20N10YDF Distributors

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NP20N10YDF N-Channel MOSFET Renesas

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