NP20P06YLG

N-Channel Power MOSFET

Renesas

* Low on-state resistance RDS(on) = 47 m MAX. (VGS =

* 10 V, ID =

* 10 A) RDS(on) = 64 m MAX. (VGS =

* 5 V, ID =

* 10 A) RDS(on) = 70 m MAX. (VGS =

* 4.5 V, ID =

* 10 A)

* Logic level drive type

* Gate to Source ESD protection diode built in

NP20P06YLG

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N-channel power mosfet.

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NP20P06YLG N-Channel Power MOSFET Renesas

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