NP20P06YLG N-Channel Power MOSFET

Renesas

Description

Preliminary Data Sheet NP20P06YLG MOS FIELD EFFECT TRANSISTOR R07DS0706EJ0100 Rev.1.00 Apr 17, 2012 .
The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Low on-state resistance RDS(o.

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Datasheet Specifications

Part number: NP20P06YLG
Manufacturer: Renesas ↗
File Size: 120.99 KB
Datasheet: NP20P06YLG-Renesas.pdf
Description: N-Channel Power MOSFET

Features

* Low on-state resistance RDS(on) = 47 m MAX. (VGS =
* 10 V, ID =
* 10 A) RDS(on) = 64 m MAX. (VGS =
* 5 V, ID =
* 10 A) RDS(on) = 70 m MAX. (VGS =
* 4.5 V, ID =
* 10 A)
* Logic level drive type
* Gate to Source ESD protection diode built in

NP20P06YLG Distributors

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NP20P06YLG N-Channel Power MOSFET Renesas

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