* Super low on-state resistance : RDS(on) = 25 m Max. ( VGS = -10 V, ID = -10 A ) RDS(on) = 38 m Max. ( VGS = -4.5 V, ID = -10 A )
* Low input capacitance : Ciss = 1650 pF Typ.
* Built-in gate protection diode
* Designed for automotive application and AEC-Q101 qualified.
* Pb-f
NP20P04SLG Datasheet (1.30 MB)
NP20P04SLG
1.30 MB
P-channel power mosfet.
NP20P04SLG -40V -20A P-channel Power MOS FET Application : Automotive Datasheet R07DS1517EJ0100 Rev.1.00 Jun. 10, 2022 Descripti.
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