Datasheet Details
| Part number | NP2012 |
|---|---|
| Manufacturer | natlinear |
| File Size | 1.51 MB |
| Description | 20V N-Channel Enhancement Mode MOSFET |
| Datasheet |
 NP2012 Datasheet
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General Description
The NP2012 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch or in PWM applications.
Key Features
- VDS =20V，ID =12A RDS(ON)(Typ. )=15mΩ @VGS=2.5V RDS(ON)(Typ. )=12mΩ @VGS=4.5V.
- High power and current handing capability.
- Lead free product is acquired.
- Surface mount package Marking and pin assignment DFN2.
- 2-6L-B （Thickness 0.55mm）.