natlinear NP2309EFR
The NP2309EFR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.| Part No. | NP2309EFR |
|---|---|
| Datasheet | NP2309EFR Download |
| Manufacturer | natlinear |
| Description | 20V P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagramGENERAL FEATURES
● VDS =-20V，ID =-2A RDS(ON)(Typ.)=61.5mΩ @VGS=-4.5V RDS(ON)(Typ.)=70.5mΩ @VGS=-2.5V● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD Rating: 2500V HBM Application
● PWM applications
● Load switch Marking and pin assignment SOT-363 (TOP VIEW) DDS 6 5 4 2309 Package
● SOT-363 HF Pb 1 2 3 D DG Ordering Information Part Number NP2309EFR-G Storage Temperature -55°C to +150°C Package SOT-363 Devices Per Reel 3000
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃ -pulse db Maximum power dissipation Operating junction Temperature range TA=25℃ TA=70℃ symbol limit unit VDS -20 V VGS ±8 V ID -2 A IDM -8 A 1.6 PD W 1.4 Tj -55—150 ℃ Rev.1.1 —Oct. 26. 2017 1 NP2309EFRELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Parameter Symbol Condition Min OFF Characteristics Drain-source breakdown voltage...
