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NP2305MR-M - 20V P-Channel Enhancement Mode MOSFET

General Description

The NP2305MR-M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS =-20V，ID =-4A RDS(ON)(Typ. )=42mΩ @VGS=-4.5V RDS(ON)(Typ. )=55mΩ @VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet Details

Part number NP2305MR-M
Manufacturer natlinear
File Size 528.50 KB
Description 20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP2305MR-M Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NP2305MR-M 20V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP2305MR-M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S G General Features  VDS =-20V，ID =-4A RDS(ON)(Typ.)=42mΩ @VGS=-4.5V RDS(ON)(Typ.)=55mΩ @VGS=-2.