natlinear NP2301BVR
The NP2301BVR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.| Part No. | NP2301BVR |
|---|---|
| Datasheet | NP2301BVR Download |
| Manufacturer | natlinear |
| Description | 20V P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagramGENERAL FEATURES
● VDS =-20V，ID =-2A RDS(ON)(Typ.)= 108mΩ @VGS=-4.5V RDS(ON)(Typ.)= 136mΩ @VGS=-2.5V● High power and current handing capability
● Lead free product is acquired
● Surface mount package Marking and pin assignment Application
● PWM applications
● Load switch Package
● SOT-23 Ordering Information Part Number NP2301BVR-G Storage Temperature -55°C to +150°C Package SOT-23 Devices Per Reel 3000
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Drain Current-Continuous (Silicon Limited) TA=25°C TA=70°C Pulsed Drain Current (Package Limited) Maximum power dissipation TA=25°C TA=70°C Operating junction Temperature range symbol VDS VGS ID IDM PD Tj limit unit -20 V ±12 V -2 A -1.6 A -17 A 2.1 W 1.3 -55—150 ℃ Rev.1.1 —Oct. 26. 2017 1 NP2301BVRELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Parameter Symbol Condition Min OFF Characteristics Drain-source breakdown voltage BVDSS VGS=0V...
