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NP2301BVR - 20V P-Channel Enhancement Mode MOSFET

General Description

The NP2301BVR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS =-20V，ID =-2A RDS(ON)(Typ. )= 108mΩ @VGS=-4.5V RDS(ON)(Typ. )= 136mΩ @VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Marking and pin assignment.

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Datasheet Details

Part number NP2301BVR
Manufacturer natlinear
File Size 742.05 KB
Description 20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP2301BVR Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NP2301BVR 20V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP2301BVR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features  VDS =-20V，ID =-2A RDS(ON)(Typ.)= 108mΩ @VGS=-4.5V RDS(ON)(Typ.)= 136mΩ @VGS=-2.