* Super low on-state resistance : RDS(on) = 48 m Max. ( VGS = -10 V, ID = -10 A ) RDS(on) = 64 m Max. ( VGS = -4.5 V, ID = -10 A )
* Low input capacitance : Ciss = 1650 pF Typ.
* Built-in gate protection diode
* Designed for automotive application and AEC-Q101 qualified.
* Pb-f
NP20P06SLG Datasheet (1.32 MB)
NP20P06SLG
1.32 MB
P-channel power mosfet.
NP20P06SLG -60V -20A P-channel Power MOS FET Application : Automotive Datasheet R07DS1518EJ0100 Rev.1.00 Jun. 17, 2022 Descripti.
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