* Super low on-state resistance RDS(on) = 8 m MAX. (VGS = 10 V, ID = 15 A)
* Low Ciss: Ciss = 1600 pF TYP. (VDS = 25 V)
* Designed for automotive application and AEC-Q101 qualified
* Small size package 8-pin HSON dual Outline Remark: Strong electric field, when exposed to this d
NP30N04QUK Datasheet (698.77 KB)
NP30N04QUK
698.77 KB
Dual n-channel power mosfet.
Data Sheet
NP30N04QUK
40 V
* 30 A
* Dual N-channel Power MOS FET Application: Automotive
R07DS1227EJ0200 Rev.2.00
May 24, 2018
Desc.
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