NP3065D6

30V N-Channel Enhancement Mode MOSFET

NP3065D6 Features

* Marking and pin assignment

* VDS =30V，ID =65A RDS(ON)(Typ.)=6.3mΩ @VGS=10V RDS(ON)(Typ.)=9mΩ @VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* 100% UIS tested Application

* Synchronus Rectification in

NP3065D6 General Description

Schematic diagram The NP3065D6 uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig.

NP3065D6 Datasheet (678.09 KB)

NP3065D6 Datasheet Preview — Preview of NP3065D6 PDF

Datasheet Details

Part number:

NP3065D6

Manufacturer:

natlinear

File Size:

678.09 KB

Description:

30v n-channel enhancement mode mosfet.

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NP3065D6 30V N-Channel Enhancement Mode MOSFET natlinear

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NP3065D6 Features

NP3065D6 General Description

Datasheet Details

File Size:

Description:

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