NP3065D6 Datasheet PDF - natlinear 30V N-Channel Enhancement Mode MOSFET Specs

NP3065D6 - 30V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP3065D6 uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

Marking and pin assignment.
VDS =30V，ID =65A RDS(ON)(Typ. )=6.3mΩ @VGS=10V RDS(ON)(Typ. )=9mΩ @VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
100% UIS tested.

Datasheet Details

Part number	NP3065D6
Manufacturer	natLinear
File Size	678.09 KB
Description	30V N-Channel Enhancement Mode MOSFET
Datasheet	NP3065D6 Datasheet
Additional preview pages of the NP3065D6 datasheet.

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Full PDF Text Transcription

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NP3065D6 30V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP3065D6 uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features Marking and pin assignment  VDS =30V，ID =65A RDS(ON)(Typ.)=6.3mΩ @VGS=10V RDS(ON)(Typ.)=9mΩ @VGS=4.

Published: Jul 23, 2024 |