NP3065D6 30V N-Channel Enhancement Mode MOSFET

Description

NP3065D6 30V N-Channel Enhancement Mode MOSFET .
Schematic diagram The NP3065D6 uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching per.

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Datasheet Specifications

Part number: NP3065D6
Manufacturer: natlinear
File Size: 678.09 KB
Datasheet: NP3065D6-natlinear.pdf
Description: 30V N-Channel Enhancement Mode MOSFET

Features

* Marking and pin assignment
* VDS =30V，ID =65A RDS(ON)(Typ. )=6.3mΩ @VGS=10V RDS(ON)(Typ. )=9mΩ @VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature

Applications

* XXXX
* Wafer Information YYYY
* Quality Code Ordering Information Part Number NP3065D6-G Storage Temperature -55°C to +150°C Package PDFN5
* 6-8L-A Devices Per Reel 5000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltag

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NP3065D6 30V N-Channel Enhancement Mode MOSFET natlinear

natlinear NP3065D6-like datasheet