Datasheet4U Logo Datasheet4U.com

NP3400MR-S - N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP3400MR-S uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS =30V，ID =5.8A RDS(ON)(Typ. )=24mΩ @VGS=4.5V RDS(ON)(Typ. )=35mΩ @VGS=2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

📥 Download Datasheet

Datasheet preview – NP3400MR-S

Datasheet Details

Part number NP3400MR-S
Manufacturer natLinear
File Size 396.14 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP3400MR-S Datasheet
Additional preview pages of the NP3400MR-S datasheet.

📁 Similar Datasheet

Other Datasheets by natlinear
  • NP3401MR-M - 30V P-Channel Enhancement Mode MOSFET
  • NP3401VR - 30V P-Channel Enhancement Mode MOSFET
  • NP3404VR - 30V N-Channel Enhancement Mode MOSFET
  • NP3407VR - 30V P-Channel Enhancement Mode MOSFET
  • NP3409MR - 30V P-Channel Enhancement Mode MOSFET
  • NP3416BEMR - 20V N-Channel Enhancement Mode MOSFET
  • NP3007DR - 30V P-Channel Enhancement Mode MOSFET
  • NP3065D6 - 30V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
N-Channel Enhancement Mode MOSFET NP3400MR-S Description Schematic diagram The NP3400MR-S uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications. D G General Features  VDS =30V，ID =5.8A RDS(ON)(Typ.)=24mΩ @VGS=4.5V RDS(ON)(Typ.)=35mΩ @VGS=2.
Published: |