* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on) = 19 m Ω MAX. (VGS = 10 V, I D = 17 A)
* Low Ciss : Ciss = 1600 pF TYP.
* Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Drain to Source Voltage Gate to Source Volta
NP34N055HHE Datasheet (260.05 KB)
NP34N055HHE
NEC
260.05 KB
N-channel power mosfet.
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP34N055HHE, NP34N055IHE
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFOR.
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