NP3007DR - 30V P-Channel Enhancement Mode MOSFET
NP3007DR Features
* D
* VDS =-30V，ID =-7A RDS(ON)(Typ.)=28mΩ @VGS=-10V RDS(ON)(Typ.)=36mΩ @VGS=-4.5V
* High power and current handing capability
* Lead free product is acquired
* Surface mount package Application Marking and pin assignment DFN2
* 2-6L-B （Thickness 0.55mm） Top View Bottom View
