* Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) ⎯ RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF) ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10PDF)
* Low Ciss: Ciss = 2100 pF TYP. (VDS = 25 V, VGS = 0 V)
* Logic level
NP40N10VDF Datasheet (158.26 KB)
NP40N10VDF
158.26 KB
N-channel power mos fet.
Preliminary Data Sheet NP40N10YDF, NP40N10VDF, NP40N10PDF 100 V 40 A N-channel Power MOS FET Application: Automotive R07DS0361E.
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