NP40N10YDF Datasheet, Fet, Renesas

NP40N10YDF Features

• Fet
• Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) ⎯ RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF) ⎯ RDS(on) = 27 mΩ MAX. (VGS = 1

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NP40N10YDF

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📄 Datasheet

Description:

N-channel power mos fet. These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features

Low on

NP40N10YDF Application

• Applications Features
• Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) ⎯ RDS(on) = 26 mΩ MAX. (VGS = 1

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NP40N10YDF

Renesas

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