* Super low on-state resistance RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on) = 8.3 mΩ MAX. (VGS = 4.5 V, ID = 38 A)
* Logic level drive type
* Gate to Source ESD protection diode built in
* Designed for automotive application and AEC-Q101 qualified Ordering
NP75N04YLG Datasheet (202.00 KB)
NP75N04YLG
202.00 KB
N-channel mosfet.
Preliminary Data Sheet
NP75N04YLG
40 V
* 75 A
* N-channel Power MOS FET Application: Automotive
R07DS1247EJ0100 Rev.1.00
Mar 02, 201.
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