NP90N03VHG

MOS FIELD EFFECT TRANSISTOR

Renesas

* Low on-state resistance ⎯ RDS(on) = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A)

* Low input capacitance ⎯ Ciss = 5000 pF TYP. (VDS = 25 V, VGS = 0 V)

* Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP90N03VHG-E1-AY∗1 NP90N03VHG-E2-AY∗1

NP90N03VHG

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Mos field effect transistor.

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NP90N03VHG MOS FIELD EFFECT TRANSISTOR Renesas

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